1 motorola bipolar power transistor device data the MJ21195 and mj21196 utilize perforated emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. ? total harmonic distortion characterized ? high dc current gain h fe = 25 min @ i c = 8 adc ? excellent gain linearity ? high soa: 3 a, 80 v, 1 second maximum ratings rating symbol value unit collectoremitter voltage v ceo 250 vdc collectorbase voltage v cbo 400 vdc emitterbase voltage v ebo 5 vdc collectoremitter voltage 1.5 v v cex 400 vdc collector current e continuous collector current e peak (1) i c 16 30 adc base current e continuous i b 5 adc total power dissipation @ t c = 25 c derate above 25 c p d 250 1.43 watts w/ c operating and storage junction temperature range t j , t stg 65 to +200 c thermal characteristics characteristic symbol max unit thermal resistance, junction to case r q jc 0.7 c/w electrical characteristics (t c = 25 c 5 c unless otherwise noted) characteristic symbol min typical max unit off characteristics collectoremitter sustaining voltage (i c = 100 madc, i b = 0) v ceo(sus) 250 e e vdc collector cutoff current (v ce = 200 vdc, i b = 0) i ceo e e 100 m adc (1) pulse test: pulse width = 5 m s, duty cycle 10%. (continued) preferred devices are motorola recommended choices for future use and best overall value.
semiconductor technical data order this document by MJ21195/d ? motorola, inc. 1998 16 ampere complementary silicon power transistors 250 volts 250 watts *motorola preferred device case 107 to204aa (to3) rev 1
2 motorola bipolar power transistor device data electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typical max unit off characteristics emitter cutoff current (v ce = 5 vdc, i c = 0) i ebo e e 100 m adc collector cutoff current (v ce = 250 vdc, v be(off) = 1.5 vdc) i cex e e 100 m adc second breakdown second breakdown collector current with base forward biased (v ce = 50 vdc, t = 1 s (nonrepetitive) (v ce = 80 vdc, t = 1 s (nonrepetitive) i s/b 5 2.5 e e e e adc on characteristics dc current gain (i c = 8 adc, v ce = 5 vdc) (i c = 16 adc, v ce = 5 vdc) h fe 25 8 e e 75 baseemitter on voltage (i c = 8 adc, v ce = 5 vdc) v be(on) e e 2.2 vdc collectoremitter saturation voltage (i c = 8 adc, i b = 0.8 adc) (i c = 16 adc, i b = 3.2 adc) v ce(sat) e e e e 1.4 4 vdc dynamic characteristics total harmonic distortion at the output v rms = 28.3 v, f = 1 khz, p load = 100 w rms h fe unmatched (matched pair h fe = 50 @ 5 a/5 v) h fe matched t hd e e 0.8 0.08 e e % current gain bandwidth product (i c = 1 adc, v ce = 10 vdc, f test = 1 mhz) f t 4 e e mhz output capacitance (v cb = 10 vdc, i e = 0, f test = 1 mhz) c ob e e 500 pf (1) pulse test: pulse width = 300 m s, duty cycle 2% i c , collector current (amps) figure 1. typical current gain bandwidth product figure 2. typical current gain bandwidth product f , current bandwidth product (mhz) t pnp MJ21195 f , current bandwidth product (mhz) t npn mj21196 i c , collector current (amps) 0.1 1.0 10 6.5 6.0 5.0 4.0 3.0 2.0 1.0 0 7.5 7.0 6.0 4.0 3.0 5.0 1.0 2.0 0.1 1.0 10 v ce = 10 v 5 v t j = 25 c f test = 1 mhz v ce = 5 v 10 v t j = 25 c f test = 1 mhz 6.5 4.5 3.5 5.5 1.5 2.5 5.5 4.5 3.5 2.5 1.5 0.5
3 motorola bipolar power transistor device data i b = 2 a figure 3. dc current gain, v ce = 20 v figure 4. dc current gain, v ce = 20 v figure 5. dc current gain, v ce = 5 v figure 6. dc current gain, v ce = 5 v h fe , dc current gain i c , collector current (amps) i c , collector current (amps) h fe , dc current gain h fe , dc current gain i c , collector current (amps) i c , collector current (amps) v ce , collectoremitter voltage (volts) figure 7. typical output characteristics i c , collector current (a) v ce , collectoremitter voltage (volts) figure 8. typical output characteristics i c , collector current (a) pnp MJ21195 npn mj21196 h fe , dc current gain typical characteristics pnp MJ21195 pnp MJ21195 npn mj21196 npn mj21196 1000 100 10 100 10 1.0 0.1 t j = 100 c 25 c 25 c v ce = 20 v 1000 100 10 100 10 1.0 0.1 t j = 100 c 25 c 25 c v ce = 20 v 1000 100 10 100 10 1.0 0.1 1000 100 10 100 10 1.0 0.1 30 25 20 15 10 5.0 0 5.0 010152025 30 25 20 15 10 0 5.0 010152025 5.0 1.5 a 1 a 0.5 a i b = 2 a t j = 25 c t j = 100 c 25 c 25 c v ce = 5 v t j = 100 c 25 c 25 c v ce = 5 v 1.5 a 1 a 0.5 a t j = 25 c
4 motorola bipolar power transistor device data figure 9. typical saturation voltages i c , collector current (amps) saturation voltage (volts) figure 10. typical saturation voltages i c , collector current (amps) saturation voltage (volts) figure 11. typical baseemitter voltage i c , collector current (amps) v be(on) , baseemitter voltage (volts) figure 12. typical baseemitter voltage i c , collector current (amps) v be(on) , baseemitter voltage (volts) figure 13. active region safe operating area v ce , collectoremitter voltage (volts) i c , collector current (amps) there are two limitations on the power handling ability of a transistor; average junction temperature and secondary breakdown. safe operating area curves indicate i c v ce limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 13 is based on t j(pk) = 200 c; t c is variable depending on conditions. at high case tempera- tures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown. pnp MJ21195 npn mj21196 typical characteristics pnp MJ21195 npn mj21196 3.0 2.5 2.0 1.5 1.0 0.5 0 100 10 1.0 0.1 1.6 1.2 1.0 0.8 0.6 0.4 0 100 10 1.0 0.1 0.2 10 1.0 0.1 100 10 1.0 0.1 10 1.0 0.1 100 10 1.0 0.1 100 10 1.0 0.1 100 10 1.0 1000 t j = 25 c v ce = 20 v (solid) v ce = 5 v (dashed) t j = 25 c i c /i b = 10 v be(sat) v ce(sat) 1.4 t j = 25 c i c /i b = 10 v be(sat) v ce(sat) t j = 25 c v ce = 20 v (solid) v ce = 5 v (dashed) t j = 25 c 10 ms 50 ms 250 ms 1 sec
5 motorola bipolar power transistor device data figure 14. MJ21195 typical capacitance v r , reverse voltage (volts) c, capacitance (pf) figure 15. mj21196 typical capacitance v r , reverse voltage (volts) c, capacitance (pf) audio precision model one plus total harmonic distortion analyzer source amplifier 50 w 0.5 w 0.5 w 8.0 w 50 v dut dut +50 v figure 16. typical total harmonic distortion figure 17. total harmonic distortion test circuit frequency (hz) t hd , total harmonic distortion (%) 10000 1000 100 100 10 1.0 0.1 10000 1000 100 100 10 1.0 0.1 1.2 1.1 1.0 0.9 0.8 0.7 0.6 100000 10000 1000 100 10 t j = 25 c f test = 1 mhz c ib c ob t j = 25 c f test = 1 mhz c ib c ob
6 motorola bipolar power transistor device data package dimensions notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. all rules and notes associated with referenced to204aa outline shall apply. style 1: pin 1. base 2. emitter case: collector dim min max min max millimeters inches a 1.550 ref 39.37 ref b 1.050 26.67 c 0.250 0.335 6.35 8.51 d 0.038 0.043 0.97 1.09 e 0.055 0.070 1.40 1.77 g 0.430 bsc 10.92 bsc h 0.215 bsc 5.46 bsc k 0.440 0.480 11.18 12.19 l 0.665 bsc 16.89 bsc n 0.830 21.08 q 0.151 0.165 3.84 4.19 u 1.187 bsc 30.15 bsc v 0.131 0.188 3.33 4.77 a n e c k t seating plane 2 pl d m q m 0.13 (0.005) y m t m y m 0.13 (0.005) t q y 2 1 u l g b v h case 107 to204aa (to3) issue z motorola reserves the right to make changes without further notice to any products herein. motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. atypicalo parameters which may be provided in motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. motorola does not convey any license under its patent rights nor the rights of others. motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the motorola product could create a situation where personal injury or death may occur. should buyer purchase or use motorola products for any such unintended or unauthorized application, buyer shall indemnify and hold motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that motorola was negligent regarding the design or manufacture of the part. motorola and are registered trademarks of motorola, inc. motorola, inc. is an equal opportunity/affirmative action employer. mfax is a trademark of motorola, inc. how to reach us: usa / europe / locations not listed : motorola literature distribution; japan : nippon motorola ltd.; spd, strategic planning office, 141, p.o. box 5405, denver, colorado 80217. 13036752140 or 18004412447 4321 nishigotanda, shinagawaku, tokyo, japan. 81354878488 customer focus center: 18005216274 mfax ? : rmfax0@email.sps.mot.com touchtone 1 6022446609 asia / pacific : motorola semiconductors h.k. ltd.; 8b tai ping industrial park, motorola fax back system us & canada only 18007741848 51 ting kok road, tai po, n.t., hong kong. 85226629298 http://sps.motorola.com/mfax/ home page : http://motorola.com/sps/ MJ21195/d ?
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